Al Filling Technology using High Temperature Sputtering.

Aseptic Formulation and Filling Using Isolator Technology

www.pharmtech.com he number of parenteral products entering development and reaching the market has increased significantly during the past decade. By some estimates as many as half of all investigational new drug applications consist of biopharmaceuticals, the vast majority of which are manufactured aseptically. Most of these products are proteins and therefore highly susceptible to microbial ...

Coating Technology: Evaporation Vs Sputtering

Effect of annealing temperature on properties of p-type conducting Al/SnO2/Al multilayer thin films deposited by sputtering

Keun-Young Park, Geun-Woo Kim, Yong-Jun Seo, Si-Nae Heo, Hang Ju Ko, Sung-Hun Lee, Tae Kwon Song and Bon Heun Koo* School of Nano & Advanced Materials Engineering, Changwon National University, Chang Won, Korea Photovoltaic and Optoelectronic device center, Korea Photonics Technology Institute (KOPTI), Gwangju, Korea Department of Material Processing, Advanced Thin Film Research Group, Korea In...

Sputtering Technology of Si Films for Low-Temperature Poly-Si TFTs

In this paper we discuss the development of sputter-Si technology for application in the area of poly-Si TFT Liquid Crystal Displays. We present the motivation behind this development and the state-of-the-art in materials and devices, based on PVD-Si precursor material. The Si-sputtering process is analyzed and data are presented on the quality of as-sputtered and post-annealed Si-films. The cu...

Low-temperature growth of boron carbide coatings by direct current magnetron sputtering and high-power impulse magnetron sputtering

access at Springerlink.com ABSTRACT B4C coatings for B-based neutron detector applications were deposited using high-power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) processes. The coatings were deposited on Si(001) as well as on flat and macrostructured (grooved) Al blades in an industrial coating unit using B4C compound targets in Ar. The HiPIMS and D...